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Article Dans Une Revue Applied Physics Letters Année : 2015

Depth-dependent phase change in Gd2O3 epitaxial layers under ion irradiation

Résumé

Epitaxial Gd2O3 thin layers with the cubic structure were irradiated with 4-MeV Au 2+ ions in the 10 13-10 15 cm-2 fluence range. X-ray diffraction indicates that ion irradiation induces a cubic to monoclinic phase change. Strikingly, although the energy-deposition profile of the Au 2+ ions is constant over the layer thickness, this phase transformation is depth-dependent, as revealed by a combined X-ray diffraction and ion channeling analysis. In fact, the transition initiates very close to the surface and propagates inwards, which can be explained by an assisted migration process of irradiation-induced defects. This result is promising for developing a method to control the thickness of the rare-earth oxide crystalline phases.

Domaines

Matériaux
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Dates et versions

hal-02193703 , version 1 (24-07-2019)

Identifiants

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N. Mejai, A. Debelle, L. Thome, G. Sattonnay, D. Gosset, et al.. Depth-dependent phase change in Gd2O3 epitaxial layers under ion irradiation. Applied Physics Letters, 2015, 107 (13), pp.131903. ⟨10.1063/1.4932089⟩. ⟨hal-02193703⟩
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