Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling - Archive ouverte HAL
Article Dans Une Revue Applied physics. A, Materials science & processing Année : 2019

Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling

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Matériaux
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hal-02192790 , version 1 (24-07-2019)

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L. Bayu Aji, E. Stavrou, J. Wallace, Alexandre Boulle, A. Debelle, et al.. Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling. Applied physics. A, Materials science & processing, 2019, 125 (1), ⟨10.1007/s00339-018-2325-7⟩. ⟨hal-02192790⟩
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