Localized Growth of Silicon Oxide Nanowires by Micro-Afterglow Oxidation - Archive ouverte HAL
Article Dans Une Revue Plasma Processes and Polymers Année : 2012

Localized Growth of Silicon Oxide Nanowires by Micro-Afterglow Oxidation

Thomas Gries
Gérard Henrion
Sylvie Migot
Vincent Fournée
Thierry Belmonte

Résumé

Silicon oxide nanowires are synthesised below 523 K by a non‐VLS mechanism on different substrates: Fe‐0.5 wt.‐%Si and Fe‐1.5 wt.‐%Si alloys and silicon wafers coated or not by 30‐nm thick coatings of iron. An Ar‐O2 micro‐afterglow is used to feed the substrate with oxidising species over an area of ≈2 mm2. In this area, circular bundles of nanowires appear after 15 min and are randomly distributed. Each bundle diameter increases with time and reaches 50 µm. After several hours, bundles overlap and give a continuous carpet of nanowires. TEM analyses show that no iron is found in the nanowires, whatever the substrate. A growth mechanism, based on the emergence of a surface defect is proposed.

Dates et versions

hal-02190517 , version 1 (22-07-2019)

Identifiants

Citer

Gregory Arnoult, Thomas Gries, Gérard Henrion, Sylvie Migot, Vincent Fournée, et al.. Localized Growth of Silicon Oxide Nanowires by Micro-Afterglow Oxidation. Plasma Processes and Polymers, 2012, 9 (11-12), pp.1125-1131. ⟨10.1002/ppap.201100191⟩. ⟨hal-02190517⟩
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