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Article Dans Une Revue Applied Physics Letters Année : 2009

The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering

Résumé

The 3C-6H polytypic transition in SiC single crystals is studied by means of diffuse x-ray scattering. Based on numerical simulations of the diffuse scattering intensity distribution we unambiguously prove that the 3C-6H transition in SiC occurs through the glide of partial dislocations and not by the "layer displacement" mechanism ͑i.e., local diffusional rearrangement of the Si and C atoms͒. The technique is extremely sensitive and can be used as a nondestructive mean to obtain statistically relevant values of the transition level down to ϳ0.05%.
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Dates et versions

hal-02190246 , version 1 (22-07-2019)

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Alexandre Boulle, J. Aubé, I. Galben-Sandulache, D. Chaussende. The 3C-6H polytypic transition in SiC as revealed by diffuse x-ray scattering. Applied Physics Letters, 2009, 94 (20), pp.201904. ⟨10.1063/1.3141509⟩. ⟨hal-02190246⟩
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