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Article Dans Une Revue Advanced Materials Research Année : 2014

Modeling of stress and strain fields induced during the Smart-Cut process on silicon. Influence of different couplings for diffusion of hydrogen at a microscopic scale

Résumé

The Smart-Cut technology consists in the increasing of external temperature and pressure imposed by the diffusion of hydrogen ions within silicon substrates leading to a wafer splitting. In the present work, we studied the evolution of the stress field in the crystalline lattice of silicon, the diffusion of hydrogen ions that can lead to the growth and coalescence of cavities. Meanwhile, we test several models and simulate these phenomena by a numerical approach, in order to compare the results to experimental observations. © (2014) Trans Tech Publications, Switzerland.

Dates et versions

hal-02182102 , version 1 (12-07-2019)

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Yuchen Zhao, Carl Labergere, Benoît Panicaud, Jean-Luc Grosseau-Poussard, P. Goudeau. Modeling of stress and strain fields induced during the Smart-Cut process on silicon. Influence of different couplings for diffusion of hydrogen at a microscopic scale. Advanced Materials Research, 2014, 996, pp.707--712. ⟨10.4028/www.scientific.net/AMR.996.707⟩. ⟨hal-02182102⟩
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