Realization of a Monolithic Multi-Terminal Si-Power Chip Integrating a 2-Phase Rectifier Composed of Vertical PIN Diodes Insulated by Vertical P+Walls - Archive ouverte HAL
Communication Dans Un Congrès Année : 2018

Realization of a Monolithic Multi-Terminal Si-Power Chip Integrating a 2-Phase Rectifier Composed of Vertical PIN Diodes Insulated by Vertical P+Walls

Résumé

This paper is within the context of mixed monolithic/hybrid integrationof a generic multi-phase power converter (DC/AC or AC/DC). The technological results provided in this paper deal with the realization of a 300m deep P+wallas well as with the realization ofthe monolithic 2-phase rectifier that consistsof four verticalPiN diodes that are separatedby P+walls.These technological results are currently in use for the realization of a three terminal common cathode chip consisting of two RC-IGBTs as well as a monolithic H-bridge converter that consists of four RC-IGBTs.

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Energie électrique Electronique
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Frédéric Richardeau  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-02180828

Soumis le : jeudi 11 juillet 2019-16:19:51

Dernière modification le : mardi 24 septembre 2024-03:24:09

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hal-02180828 , version 1 (11-07-2019)

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  • HAL Id : hal-02180828 , version 1

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Adem Lale, Abdelhakim Bourennane, Frédéric Richardeau, Hakim Tahir. Realization of a Monolithic Multi-Terminal Si-Power Chip Integrating a 2-Phase Rectifier Composed of Vertical PIN Diodes Insulated by Vertical P+Walls. 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia. ⟨hal-02180828⟩

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