A Gain-Controllable Wide-Band Low-Noise Amplifier in Low-Cost 0.8-µm Si BiCMOS Technology - Archive ouverte HAL
Article Dans Une Revue IEEE Transactions on Microwave Theory and Techniques Année : 2004

A Gain-Controllable Wide-Band Low-Noise Amplifier in Low-Cost 0.8-µm Si BiCMOS Technology

Fabrice Seguin
Frédéric Alicalapa

Résumé

A low-noise amplifier (LNA) implemented in a low-cost Si-BiCMOS 0.8-$muhboxm$process is presented. It utilizes current conveyors as building blocks. The principle and design methodology are presented, followed by results obtained from simulations. A brief technology and measurement technique description is then made, leading up to the measurement results obtained. The performance is compared with some other LNA realizations. The potentialities of the LNA are finally touched upon, with particular regard to future communications systems. The gain of the LNA is controllable, in the range of 0?20 dB, by varying the dc bias current. Negative decibel gains can also be obtained, making it an attenuator circuit.
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Dates et versions

hal-02170531 , version 1 (02-07-2019)

Identifiants

  • HAL Id : hal-02170531 , version 1

Citer

Fabrice Seguin, Balwant Godara, Frédéric Alicalapa, Alain Fabre. A Gain-Controllable Wide-Band Low-Noise Amplifier in Low-Cost 0.8-µm Si BiCMOS Technology. IEEE Transactions on Microwave Theory and Techniques, 2004, 52 (1), pp.154 - 160. ⟨hal-02170531⟩
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