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Article Dans Une Revue Materials Science Forum Année : 2011

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Résumé

Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).
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Dates et versions

hal-02168909 , version 1 (29-06-2019)

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Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, et al.. Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection. Materials Science Forum, 2011, 679-680, pp.567-570. ⟨10.4028/www.scientific.net/MSF.679-680.567⟩. ⟨hal-02168909⟩
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