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                <term xml:lang="en">Silicon carbide</term>
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              <p>This paper deals with the pulse capabilities of 4H-SiC optically triggered thyristors. The device structure and the fabrication process are presented. The results of pulse characterizations are shown. Two types of current pulses were used, a short (pulse width of 10 µs) and a long (pulse width of 650 µs). Peak current densities of 17 kA.cm-2 and 4 kA.cm-2 were attained with short and long pulses respectively. The failures and degradation caused by these experiments are also shown in this paper.</p>
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