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Article Dans Une Revue Nanotechnology Année : 2019

Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

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hal-02164153 , version 1 (24-06-2019)

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Nathaniel Feldberg, Oleksii Klymov, Nuria Garro, Ana Cros, Nicolas Mollard, et al.. Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC. Nanotechnology, 2019, ⟨10.1088/1361-6528/ab261f⟩. ⟨hal-02164153⟩
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