Hybrid MBE-CBE Growth and Characterization of undoped In 0,53 Ga 0,47 As on Fe-InP(001) for avalanche photodiodes (APDs) - Archive ouverte HAL
Communication Dans Un Congrès Année : 2018

Hybrid MBE-CBE Growth and Characterization of undoped In 0,53 Ga 0,47 As on Fe-InP(001) for avalanche photodiodes (APDs)

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hal-02159623 , version 1 (18-06-2019)

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  • HAL Id : hal-02159623 , version 1

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Alex Brice Poungoué Mbeunmi, Thierno Mamoudou Diallo, Mohamed El-Gahouchi, Mourad Jellite, Guillaume Gommé, et al.. Hybrid MBE-CBE Growth and Characterization of undoped In 0,53 Ga 0,47 As on Fe-InP(001) for avalanche photodiodes (APDs). 34th North American Conference on Molecular Beam Epitaxy (NAMBE 2018), Sep 2018, Banff, Alberta, Canada. ⟨hal-02159623⟩
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