Article Dans Une Revue ACS photonics Année : 2018

Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

Résumé

A practical III-nitride photovoltaic (PV) application consists of transfer to a foreign substrate with enhanced functionality and integration with mature group IV or III–V based solar cell technologies. This requires a lift-off technique compatible with good quality III–N materials, with photovoltaic device fabrication and with subsequent bonding on a heterogeneous substrate. Here, we demonstrate the first InGaN-based solar cells on a 2 in. h-BN/sapphire wafer and their transfer to glass with a backside reflector. III–N solar cells with various sizes and designs are processed and characterized on a full 2 in. wafer giving performances comparable to similar devices on sapphire. The subsequent crack-free transfer of the solar cells, enabled by Van der Waal bonded 2D layered h-BN, to a substrate with a backside reflector yields an increase in the short circuit current density of up to 20%. This demonstration of transferred InGaN-based solar cells on foreign substrates while increasing performance represents a major advance toward lightweight, low cost, and high efficiency photovoltaic applications.

Fichier principal
Vignette du fichier
ayari2018.pdf (423.09 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Licence

Dates et versions

hal-02158426 , version 1 (06-12-2021)

Licence

Identifiants

Citer

Taha Ayari, Suresh Sundaram, Xin Li, Saiful Alam, Chris Bishop, et al.. Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance. ACS photonics, 2018, 5 (8), pp.3003-3008. ⟨10.1021/acsphotonics.8b00663⟩. ⟨hal-02158426⟩
209 Consultations
257 Téléchargements

Altmetric

Partager

  • More