Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 155µm - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Optical Materials Express Année : 2019

Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 155µm

Résumé

We report on the improvement of performance of InN-based saturable absorbers in fiber lasers operating at 1.55 µm by reducing the residual doping, due to the lower Burstein-Moss effect. The improved tuning of the band-to-band transition with respect to the operation wavelength leads to an enhancement of nonlinear optical effects, resulting in 30 % of modulation depth. We introduce the development of an ultrafast mode-locked fiber laser using an improved InN-based saturable absorber that incorporates a buffer layer between the active layer and the substrate. The laser delivers output pulses with a temporal width of ∼220 fs, a repetition rate of 5.25 MHz, and high-pulse energy of 5.8 nJ.

Dates et versions

hal-02158320 , version 1 (18-06-2019)

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L. Monroy, M. Jiménez-Rodríguez, P. Ruterana, E. Monroy, M. Gonzalez-Herraez, et al.. Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 155µm. Optical Materials Express, 2019, 9 (7), pp.2785. ⟨10.1364/OME.9.002785⟩. ⟨hal-02158320⟩
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