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Communication Dans Un Congrès Année : 2014

28nm advanced CMOS resistive RAM solution as embedded non-volatile memory

J. Berger

Résumé

A back-end integrated Resistive Random Access Memory (ReRAM) (TiN/HfO 2 /Ti/TiN) in advanced 28nm CMOS process is evaluated. Significant operating margins and high performances identified at device level (read margin, low power set/reset, endurance and retention) are demonstrated to be significantly reduced on larger statistics, i.e. characterized within 1kbit arrays. The High Resistance State (HRS) dispersion, identified as a limiting factor, is modeled through the “tunneling barrier thickness” variation. The optimization through electrical condition tuning is discussed. A global overview of HfO 2 material performances is assessed on statistical basis and projection for larger array integration is discussed.
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Dates et versions

hal-02153560 , version 1 (12-06-2019)

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Citer

Antoine Benoist, S. Blonkowski, S. Jeannot, S. Denorme, J. Damiens, et al.. 28nm advanced CMOS resistive RAM solution as embedded non-volatile memory. IRPS, Jun 2014, Waikoloa HI, United States. pp.2E.6.1-2E.6.5, ⟨10.1109/IRPS.2014.6860604⟩. ⟨hal-02153560⟩
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