Article Dans Une Revue Materials Science Forum Année : 2002

Realization of a High-Current and Low RON 600V Current-Limiting Device

Résumé

4H-SiC P + NN + structures have been fabricated following Medici TM software simulation in order to block voltages as high as 6 kV. In particular, these diodes are realized by surrounding the emitter by a Aluminum-implanted ring called Junction Termination Extension (JTE). Electrical characterizations under reverse bias at room temperature and in various environments (air, SF 6) show a premature breakdown of the diodes. This breakdown is localized at the emitter periphery. OBIC (Optical Beam Induced Current) measurements show a peak of photocurrent at the emitter junction edge, indicating the presence of a high electric field. These results involve an effectiveness of 60 % of the JTE. This is probably related to a low electrical activation of the implanted aluminum during the post-implantation annealing and to the presence of positive charges at the surface of the devices. Introduction.

Fichier principal
Vignette du fichier
paper194.pdf (76.6 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Licence
Loading...

Dates et versions

hal-02151717 , version 1 (09-06-2019)

Licence

Identifiants

Citer

F. Nallet, Phillippe Godignon, Dominique Planson, Christophe Raynaud, Jean-Pierre P Chante. Realization of a High-Current and Low RON 600V Current-Limiting Device. Materials Science Forum, 2002, 389-393, pp.1247-1250. ⟨10.4028/www.scientific.net/MSF.389-393.1247⟩. ⟨hal-02151717⟩
142 Consultations
197 Téléchargements

Altmetric

Partager

  • More