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Article Dans Une Revue Materials Science Forum Année : 2001

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Résumé

Al and N implantations were carried out in 6H-SiC n-type epitaxial layers at room temperature. RBS/C analysis confirms the presence of an amorphous layer up to the surface in the as-implanted samples. The samples rf-annealed at 1700°C during 30 mn with a preliminary 40°C per second heating slope are recrystallised in RBS/C analysis terms. SIMS measurements show no dopant loosing after the annealing and dopant profile distributions are in agreement with CNM Monte-Carlo simulation. A good surface stoichiometry is revealed by XPS after annealing but AFM surface measurements reveal a relatively high rms roughness (14 nm) on annealed samples. High electrical activation of dopants was found, 19 kΩ/& sheet resistance, which corresponds to 50 % electrical dopant activation for Al implanted layer, and 6.7 kΩ/& sheet resistance and 100% electrical activation for N-implanted layer.
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Dates et versions

hal-02151710 , version 1 (09-06-2019)

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Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing. Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩. ⟨hal-02151710⟩
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