Synthesis of T-Nb<sub>2</sub>O<sub>5</sub> thin-films deposited by atomic layer deposition for miniaturized electrochemical energy storage devices - Archive ouverte HAL Access content directly
Journal Articles Energy Storage Materials Year : 2019

Synthesis of T-Nb2O5 thin-films deposited by atomic layer deposition for miniaturized electrochemical energy storage devices

Abstract

Atomic Layer Deposition has been used to grow 30 to 90 nm-thick amorphous Nb2O5 films onto Pt current collectors deposited on Si wafer. While T-Nb2O5 polymorph is obtained by further annealing at 750 °C, the film thickness and the resulting electrode areal capacity are successfully controlled by tuning the number of ALD cycles. The electrochemical analysis reveals a lithium ion intercalation redox mechanism in the T-Nb2O5 electrode. An electrode areal capacity of 8 µAh.cm-2 could be achieved at 1 C, with only 40% capacity loss at 30 C (2 minutes discharging time). This paper aims at demonstrating the use of Atomic Layer Deposition method in the fabrication of Nb205-based on-chip micro-devices for Internet of Things (IoT) applications.
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Dates and versions

hal-02135683 , version 1 (21-05-2019)

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Saliha Ouendi, Cassandra Arico, Florent Blanchard, Jean-Louis Codron, Xavier Wallart, et al.. Synthesis of T-Nb2O5 thin-films deposited by atomic layer deposition for miniaturized electrochemical energy storage devices. Energy Storage Materials, 2019, 16, pp.581-588. ⟨10.1016/j.ensm.2018.08.022⟩. ⟨hal-02135683⟩
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