Stable operation of water-gated organic field-effect transistor depending on channel flatness, electrode metals and surface treatment - Archive ouverte HAL Access content directly
Journal Articles Japanese Journal of Applied Physics Year : 2019

Stable operation of water-gated organic field-effect transistor depending on channel flatness, electrode metals and surface treatment

Abstract

The main purpose of this study is to clarify the factors for the stable operation of a poly(3-hexylthiophene) (P3HT)-based water gated organic field effect transistor (WG-OFET). To this end, the influence of the surface morphologies and electrode metals on the transistor properties were investigated. The experimental results indicated that a flat surface improved the on/off ratio and switching repeatability. Treating the surface with a lipid membrane was found to reduce hysteresis loops in the transfer curves probably due to the reduced number of carrier traps. The Au gate electrode effectively lowered the threshold voltage. Consequently, stable transistor operation with a low threshold voltage of 35 mV was achieved by employing a gold gate electrode and lipid membrane treatment. These results suggest that WG-OFETs with an ultra-thin lipid membrane have great potential for sensor applications, and in particular for sensing water-soluble analytes.
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Dates and versions

hal-02132714 , version 1 (28-01-2020)
hal-02132714 , version 2 (03-02-2020)

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Tin Phan Nguy, Ryoma Hayakawa, Volkan Kilinc, Matthieu Petit, Jean-Manuel Raimundo, et al.. Stable operation of water-gated organic field-effect transistor depending on channel flatness, electrode metals and surface treatment. Japanese Journal of Applied Physics, 2019, 58 (SD), pp.SDDH02. ⟨10.7567/1347-4065/ab09d2⟩. ⟨hal-02132714v2⟩
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