Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes
Résumé
In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10A and 24A have been applied and some diodes were able to endure 100,000 cycles while others failed before. The causes of failure have not been determined but a correlation between peak surge current and physical parameters evolution rate has been proven. Simulations show that contact temperature during surge can reach 300°C, which is very close to Schottky contact annealing temperatures.
Domaines
Energie électrique| Origine | Fichiers produits par l'(les) auteur(s) |
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