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Article Dans Une Revue Engineering Failure Analysis Année : 2018

Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition

O. Latry
Pascal Dherbécourt
Patrick Denis
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Fabien Cuvilly
Moncef Kadi

Résumé

Ageing tests through thermal storage at high temperature (240 °C) are carried out on commercial Schottky diodes in TO220 package, in “derating mode” operational conditions. The analysis revealed a failure mechanism, resulting into vaporization of the moisture present in significant quantity in the resin/sole interface. As a consequence, a degradation of the resin, freeing up space, caused the solder to spread under the chip. The X-ray analyses, acoustic microscopy SAM, optical and electron microscopy are used to describe the failure mechanism. We note that the resin package has undergone a strong degradation. Investigations show that this phenomenon is fully responsible for the degradation process taking place in derating mode use. Most components behave similarly with respect to the ageing; however, an atypical and unusual result is revealed for one component after the ageing process. Thus, the specific case is presented as a potentially decisive case for the validation of a failure analysis, so that technical solution can be formed.
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Dates et versions

hal-02131204 , version 1 (07-01-2022)

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Citer

O. Latry, Pascal Dherbécourt, Patrick Denis, Fabien Cuvilly, Moncef Kadi. Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition. Engineering Failure Analysis, 2018, 83, pp.185-192. ⟨10.1016/J.ENGFAILANAL.2017.09.010⟩. ⟨hal-02131204⟩
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