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Article Dans Une Revue Optics Express Année : 2019

Laser operation of highly-doped Tm:LiYF 4 epitaxies: towards thin-disk lasers

Résumé

Quasi-continuous-wave laser operation of 20 at.% Tm:LiYF4 thin films (84–240 μm) grown by Liquid Phase Epitaxy (LPE) on undoped LiYF4 substrates is achieved. The 240 μm-thick Tm:LiYF4 active layer pumped at 793 nm with a simple double-pass scheme generated 152 mW (average power) at 1.91 μm with a slope efficiency of 34.4% with respect to the absorbed pump power. A model of highly-doped Tm:LiYF4 lasers accounting for cross-relaxation, energy-transfer upconversion and energy migration is developed showing good agreement with the experiment. The pump quantum efficiency for Tm3+ ions is discussed and the energy-transfer parameters are derived. These results show that LPE-grown Tm:LiYF4 thin films are promising for ~1.9 μm thin-disk lasers.

Dates et versions

hal-02129322 , version 1 (14-05-2019)

Identifiants

Citer

Rémi Soulard, Mohamed Salhi, Gurvan Brasse, Pavel Loiko, Jean-Louis Doualan, et al.. Laser operation of highly-doped Tm:LiYF 4 epitaxies: towards thin-disk lasers. Optics Express, 2019, 27 (6), pp.9287. ⟨10.1364/OE.27.009287⟩. ⟨hal-02129322⟩
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