Strain-mediated all-magnetoelectric memory cell
Abstract
Downscaling of magnetoelectric random access memory device (MELRAM) is considered by studying an example of the hybrid structure based on ferroelectric-magnetostrictive metal. Elastic mechanism of magnetoelectric interaction is analyzed by numerical modeling taking into account inhomogeneous distribution of anisotropic strain, ferroelec-tric polarization and electric field. The proposed shape of the cell allows to decrease the inhomogeneity of the strain in the magnetic subsystem and to achieve remarkable dynamic characteristics for a nanometric device sized nm 3 : we adopted an input voltage of V0=90 mV and obtained a switching time tS=1.1 ns, an output readout voltage VME=4.7 mV and an ultra-low energy consumption 13aJ/bit.
| Origin | Files produced by the author(s) |
|---|
Loading...