Electric field tuning of magnetization in an antiferroelectric‐based heterostructure: Example of NMG/PLZST/NMG
Abstract
A magnetoelectric (ME) heterostructure was fabricated by depositing a Ni-Mn-Ga (NMG) magnetic film on an antiferroelectric (AFE) PLZST-(Pb, La)(Zr, Sn, Ti)O3-ceramic substrate. Significant and reversible electric field-induced relative magnetization changes (∆M/M0) were firstly observed in this magnetic/AFE heterostructure, and the ∆M/M0 vs electric field loops have been found to correspond well with the strain-electric field curve of PLZST ceramic. The maximum ∆M/M0 variation can reach 15%, indicating an obvious strain-mediated converse magnetoelectric (CME) effect. A maximum CME coefficient of 1.14 × 10-9 s/m was obtained at the switching electric fields of PLZST. The collected results suggest that AFE materials with a large electric-field-induced phase transition strain could be alternative candidates in ME coupling heterostructures.
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