Field effect transistor and photo transistor of narrow band gap nanocrystal arrays using ionic glasses
Résumé
Gating of nanocrystal films is currently driven by two approaches: either the use of a dielectric such as SiO2 or the use of electrolyte. SiO2 allows fast bias sweeping over a broad range of temperatures but requires a large operating bias. Electrolyte, thanks to a large capacitance, leads to significantly reduce operating bias but is limited to slow speed and quasi room temperature operation. None of these operating conditions are optimal for narrow band gap nanocrystal-based phototransistors for which the need of a large capacitance gate has to be combined with low temperature operation. Here we explore the use of a LaF3 ionic glass as a high capacitance gating alternative. We demonstrate for the first time the use of such ionic glasses to gate thin films made of HgTe and PbS nanocrystals. This gating strategy allows operation in the 180 to 300 K range of temperatures with capacitance as high as 1 µF·cm-2. We unveil the unique property of ionic glass gate to enable unprecedented tunability of both magnitude and dynamics of the photocurrent, thanks to high charge doping capability within an operating temperature window relevant for infrared photodetection. We demonstrate that by carefully choosing the operating gate bias, the signal to noise ratio can be improved by a factor 100 and the time response accelerated by a factor 6. Moreover, the good transparency of LaF3 substrate allows back side illumination in the infrared which is highly valuable for the design of phototransistors
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