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Article Dans Une Revue Sensors and Actuators A: Physical Année : 1995

High-sensitivity Hall sensors using GaInAs/AlInAspseudomorphic heterostructures

Résumé

In this work, we propose solutions based on band-gap engineering of III-V heterostructures to develop new types of magnetic sensors using the properties of a two-dimensional electron gas and the benefit of strain in pseudomorphic channels. First, the optimization of the growth of pseudomorphic In0.75Ga0.25As/In0.52Al0.48As heterostructures by molecular beam epitaxy is described. A low sheet electron density of 9.84×1011 cm−2 and a high mobility of 13 000 cm2 V−1 s−1 at room temperature have been obtained. A physical model of the structure including a self-consistent description of the coupled Schrödinger and Poisson equations has been developed for a better understanding of the influence of the heterostructure design on its electronic properties. A sensitivity of 580 V A−1 T−1 with a temperature coefficient of −550 ppm °C−1 between −80 and 85 °C is obtained. High signal-to-noise ratios corresponding to minimal detectable fields of 350 nT Hz−1/2 at 100 Hz-1/2 and 120 nT Hz−1/2 at 1 kHz have been measured.
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Dates et versions

hal-02119481 , version 1 (15-05-2019)

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S. Delmedico, T. Benyatou, Gérard Guillot, Michel Gendry, M. Oustric, et al.. High-sensitivity Hall sensors using GaInAs/AlInAspseudomorphic heterostructures. Sensors and Actuators A: Physical , 1995, 46 (1-3), pp.298-301. ⟨10.1016/0924-4247(94)00909-2⟩. ⟨hal-02119481⟩
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