Reliability of AlN/Sapphire bilayer structure for high-temperature SAW applications
Résumé
This paper explores the possibility to use AlN/sapphire bilayer structure as piezoelectric material for high-temperature SAW applications in air atmosphere. In order to verify the temperature stability of AlN, homemade AlN/Sapphire samples were annealed during 2 to 20 hours, at temperatures going from 700 to 1000°C, before being characterized by ex situ X-ray diffraction (XRD), ellipsometry and secondary ion mass spectroscopy (SIMS). Ex situ SAW measurements were used to transfer the obtained results to the SAW field, while in situ investigations were conducted up to 500°C to observe the effect of temperature on the SAW signal.
Origine | Fichiers produits par l'(les) auteur(s) |
---|
Loading...