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Communication Dans Un Congrès Année : 2010

Reliability of AlN/Sapphire bilayer structure for high-temperature SAW applications

Thierry Aubert
Omar Elmazria
Badreddine Assouar
Ahmad Hamdan

Résumé

This paper explores the possibility to use AlN/sapphire bilayer structure as piezoelectric material for high-temperature SAW applications in air atmosphere. In order to verify the temperature stability of AlN, homemade AlN/Sapphire samples were annealed during 2 to 20 hours, at temperatures going from 700 to 1000°C, before being characterized by ex situ X-ray diffraction (XRD), ellipsometry and secondary ion mass spectroscopy (SIMS). Ex situ SAW measurements were used to transfer the obtained results to the SAW field, while in situ investigations were conducted up to 500°C to observe the effect of temperature on the SAW signal.
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Dates et versions

hal-02118178 , version 1 (02-05-2019)

Identifiants

  • HAL Id : hal-02118178 , version 1

Citer

Thierry Aubert, Omar Elmazria, Badreddine Assouar, Ahmad Hamdan, Damien Genève. Reliability of AlN/Sapphire bilayer structure for high-temperature SAW applications. IEEE International Ultrasonics Symposium, Oct 2010, San Diego, France. ⟨hal-02118178⟩
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