Study of the oxidation at the Al2O3 / GaSb interface after NH4OH and HCl / (NH4)2S passivations and O2 plasma post atomic layer deposition process - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2018

Study of the oxidation at the Al2O3 / GaSb interface after NH4OH and HCl / (NH4)2S passivations and O2 plasma post atomic layer deposition process

Résumé

In this work, the Al2O3/GaSb interface has been studied by x-ray photoelectron spectroscopy in order to improve interfacial and electrical properties of metal–oxide–semiconductor structures based on GaSb. First, different passivations using NH4OH or (NH4)2S were studied with a dilution of 4% and 5%, respectively, in order to reduce native oxides on the GaSb surface. Then, we considered the oxidation of the Al2O3 and GaSb surface after treatments with an oxygen (O2) plasma post atomic layer deposition (ALD) process and with post deposition annealing at different temperatures. We found that (NH4)2S passivation leads to a lower quantity of native oxides on the GaSb surface and that the O2 plasma post ALD process enables the formation of an oxygen-rich layer within the Al2O3 at the interface reducing the GaSb surface oxidation after post deposition annealing of the oxide.
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Dates et versions

hal-02115683 , version 1 (30-04-2019)

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Citer

Y. Lechaux, A. Fadjie-Djomkam, M. Pastorek, X. Wallart, S. Bollaert, et al.. Study of the oxidation at the Al2O3 / GaSb interface after NH4OH and HCl / (NH4)2S passivations and O2 plasma post atomic layer deposition process. Journal of Applied Physics, 2018, 124 (17), pp.175302. ⟨10.1063/1.5049571⟩. ⟨hal-02115683⟩
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