Impact of oxygen plasma postoxidation process on Al2O 3 / n -In0.53Ga0.47As metal-oxide-semiconductor capacitors - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2016

Impact of oxygen plasma postoxidation process on Al2O 3 / n -In0.53Ga0.47As metal-oxide-semiconductor capacitors

Résumé

Capacitance-voltage (C-V) measurements and x-ray photoelectron spectroscopy (XPS) analysis were performed in order to investigate the effect of a oxygen (O2) plasma after oxide deposition on the Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor structure passivated with ammonia NH4OH solution. From C-V measurements, an improvement of charge control is observed using the O2 plasma postoxidation process on In0.53Ga0.47As, while the minimum of interface trap density remains at a good value lower than 1 × 1012 cm−2 eV−1. From XPS measurements, we found that NH4OH passivation removes drastically the Ga and As native oxides on the In0.53Ga0.47As surface and the O2 plasma postoxidation process enables the reduction of interface re-oxidation after post deposition annealing (PDA) of the oxide. The advanced hypothesis is the formation of interfacial barrier between Al2O3 and In0.53Ga0.47As which prevents the diffusion of oxygen species into the semiconductor surface during PDA.
Fichier principal
Vignette du fichier
Lechaux_2016_1.4963656.pdf (1.16 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-02115676 , version 1 (27-05-2022)

Identifiants

Citer

Y. Lechaux, A. Fadjie-Djomkam, S. Bollaert, Nicolas Wichmann. Impact of oxygen plasma postoxidation process on Al2O 3 / n -In0.53Ga0.47As metal-oxide-semiconductor capacitors. Applied Physics Letters, 2016, 109 (13), pp.131602. ⟨10.1063/1.4963656⟩. ⟨hal-02115676⟩
18 Consultations
71 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More