Improvement of interfacial and electrical properties of Al2O 3 / n-Ga0.47 In0.53 As for III-V impact ionization MOSFETs - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Physics: Conference Series Année : 2015

Improvement of interfacial and electrical properties of Al2O 3 / n-Ga0.47 In0.53 As for III-V impact ionization MOSFETs

Résumé

In this work, Metal - Oxide - Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor - oxide interface quality. It is observed that the (NH4)2S passivation shows lower interface trap density in the order of 6×1011cm-2.eV-1. Also, it is observed that O2 plasma densification after a passivation in a NH4OH solution improves the electrical behaviour of the charge control. Low interface trap density in the order of 1×1012cm-2.eV-1 was obtained for different treatments presented in this work.
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Origine : Publication financée par une institution
Licence : CC BY - Paternité

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hal-02115664 , version 1 (11-07-2022)

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Y. Lechaux, A. Fadjie, S. Bollaert, V. Talbo, J. Mateos, et al.. Improvement of interfacial and electrical properties of Al2O 3 / n-Ga0.47 In0.53 As for III-V impact ionization MOSFETs. Journal of Physics: Conference Series, 2015, 647, pp.012062. ⟨10.1088/1742-6596/647/1/012062⟩. ⟨hal-02115664⟩
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