Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering
Résumé
Raman scattering has been used to estimate the critical layer thickness and to analyze the alloying effect on strain relaxation in InxGa1−xAs layers grown by molecular beam epitaxy on InP [001]-oriented substrate, for x ranging from 0.0 to 1.0. Measurements of longitudinal optical GaAs-like phonon frequency and Raman linewidth showed that the indium/gallium ratio contents greatly influences the strain relaxation. A comparison between Raman and x-ray diffraction measurements of relaxation ratios as a function of layer thickness is presented. The results can be explained in terms of the combined effect of strain and chemical and structural disorder.
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