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Article Dans Une Revue Applied Physics Letters Année : 2001

Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates

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We have investigated the effect of misorientated InP001 substrates on the optical properties of InAs quantum islands QIs grown by molecular-beam epitaxy in the Stranski-Krastanow regime. Detailed temperature-dependent photoluminescence PL, excitation density PL, and polarization of photoluminescence PPL are studied. PPL shows a high degree of linear polarization near 40% for the nominally oriented substrate n and for the substrate with 2° off miscut angle toward the 110 direction (2° F), while it is near 15% for the substrate with 2° off miscut angle towards 010 direction (2° B), indicating the growth of InAs quantum wires on nominal and 2° F substrates and of InAs quantum dots on 2° B substrate. These island shapes are confirmed by morphological investigations performed by atomic force microscopy. The integrated PL intensity remains very strong at room temperature, as much as 36% of that at 8 K, indicating a strong spatial localization of the carriers in the InAs QIs grown on InP001.
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hal-02111448 , version 1 (26-04-2019)

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Bassem Salem, J. Olivares, G. Guillot, Georges Bremond, Julien Brault, et al.. Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates. Applied Physics Letters, 2001, 79 (26), pp.4435-4437. ⟨10.1063/1.1427742⟩. ⟨hal-02111448⟩
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