Measurement and modelling of photocarrier properties in ultrathin photovoltaic GaAs n/p junctions for vertical epitaxial heterostructure architectures - Archive ouverte HAL
Communication Dans Un Congrès Année : 2016

Measurement and modelling of photocarrier properties in ultrathin photovoltaic GaAs n/p junctions for vertical epitaxial heterostructure architectures

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hal-02097327 , version 1 (11-04-2019)

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  • HAL Id : hal-02097327 , version 1

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M.C. A. York, F. Proulx, D. P. Masson, A. Jaouad, B. Bouzazi, et al.. Measurement and modelling of photocarrier properties in ultrathin photovoltaic GaAs n/p junctions for vertical epitaxial heterostructure architectures. SPIE Photonics West, San Francisco, United States, 2016, Feb 2016, San Fransisco, United States. ⟨hal-02097327⟩
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