Ultrasensitive Extended-Gate Ion-Sensitive-Field-Effect-Transistor Developed Utilizing an Industrial UTBB FDSOI Platform - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017
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hal-02096925 , version 1 (11-04-2019)

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  • HAL Id : hal-02096925 , version 1

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G. T. Ayele, S. Monfray, F. Boeuf, J.-P. Cloarec, S. Ecoffey, et al.. Ultrasensitive Extended-Gate Ion-Sensitive-Field-Effect-Transistor Developed Utilizing an Industrial UTBB FDSOI Platform. European Solid-State Device Research Conference, ESSDERC, Sep 2017, Leuven, Belgium. ⟨hal-02096925⟩
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