Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing - Archive ouverte HAL
Article Dans Une Revue Journal of Nanoscience and Nanotechnology Année : 2011

Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

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hal-02087118 , version 1 (01-04-2019)

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M. Hadj Alouane, B. Ilahi, H. Maaref, B. Salem, V. Aimez, et al.. Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing. Journal of Nanoscience and Nanotechnology, 2011, 11 (10), pp.9251-9255. ⟨10.1166/jnn.2011.4298⟩. ⟨hal-02087118⟩
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