Chemical composition of anodically formed p-typeporous gaas in hf-based electrolyte - Archive ouverte HAL
Communication Dans Un Congrès Année : 2016
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hal-02079239 , version 1 (25-03-2019)

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  • HAL Id : hal-02079239 , version 1

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A.Y. Bioud, A. Boucherif, A. Belarouci, E. Paradis, D. Drouin, et al.. Chemical composition of anodically formed p-typeporous gaas in hf-based electrolyte. Porous Semiconductors - Science and Technology, Mar 2016, Tarragona, Spain. ⟨hal-02079239⟩
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