Electric-Field-Effect Modulation of the Transition Temperature, Mobile Carrier Density, and In-Plane Penetration Depth of NdBa 2 Cu 3 O 7 − δ Thin Films
Résumé
We explore the relationship between the critical temperature T c , the mobile areal carrier density n 2D , and the zero-temperature magnetic in-plane penetration depth ab 0, in very thin underdoped NdBa 2 Cu 3 O 7ÿ films near the superconductor to insulator transition using the electric-field-effect technique. Having established consistency with a Kosterlitz-Thouless transition, we observe that T KT depends linearly on n 2D , the signature of a quantum superconductor to insulator transition in two dimensions with z = 1, where z is the dynamic and is the critical exponent of the in-plane correlation length.
Domaines
Matière Condensée [cond-mat]
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Field_Effect_2006-09-13_resubmitted_generatedbyPRL.pdf (820.68 Ko)
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