Electric-Field-Effect Modulation of the Transition Temperature, Mobile Carrier Density, and In-Plane Penetration Depth of NdBa 2 Cu 3 O 7 − δ Thin Films - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review Letters Année : 2007

Electric-Field-Effect Modulation of the Transition Temperature, Mobile Carrier Density, and In-Plane Penetration Depth of NdBa 2 Cu 3 O 7 − δ Thin Films

D. Matthey
  • Fonction : Auteur
N. Reyren
T. Schneider
  • Fonction : Auteur

Résumé

We explore the relationship between the critical temperature T c , the mobile areal carrier density n 2D , and the zero-temperature magnetic in-plane penetration depth ab 0, in very thin underdoped NdBa 2 Cu 3 O 7ÿ films near the superconductor to insulator transition using the electric-field-effect technique. Having established consistency with a Kosterlitz-Thouless transition, we observe that T KT depends linearly on n 2D , the signature of a quantum superconductor to insulator transition in two dimensions with z = 1, where z is the dynamic and is the critical exponent of the in-plane correlation length.
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hal-02076399 , version 1 (01-04-2019)

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D. Matthey, N. Reyren, J.-M. Triscone, T. Schneider. Electric-Field-Effect Modulation of the Transition Temperature, Mobile Carrier Density, and In-Plane Penetration Depth of NdBa 2 Cu 3 O 7 − δ Thin Films. Physical Review Letters, 2007, 98 (5), ⟨10.1103/PhysRevLett.98.057002⟩. ⟨hal-02076399⟩
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