Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: Electrical resistivity and device modelling - Archive ouverte HAL
Proceedings/Recueil Des Communications Année : 2017

Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: Electrical resistivity and device modelling

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hal-02074199 , version 1 (20-03-2019)

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Meghan Beattie, David Hobson, Christopher Valdivia, Karin Hinzer, Youcef A Bioud, et al.. Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: Electrical resistivity and device modelling. 2017 Photonics North (PN), Jun 2017, Ottawa, Canada. IEEE, pp.1-1, 2017, ⟨10.1109/PN.2017.8090565⟩. ⟨hal-02074199⟩
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