Hybrid MBE-CBE Growth and Characterization of undoped In0,53Ga0,47As on Fe-InP(001) for avalanche photodiodes (APDs) - Archive ouverte HAL
Poster De Conférence Année : 2018

Hybrid MBE-CBE Growth and Characterization of undoped In0,53Ga0,47As on Fe-InP(001) for avalanche photodiodes (APDs)

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hal-02073092 , version 1 (19-03-2019)

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  • HAL Id : hal-02073092 , version 1

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A. B. Poungoue Mbeunmi, T.M. Diallo, M. El-Gahouchi, M. Jellite, G. Gommé, et al.. Hybrid MBE-CBE Growth and Characterization of undoped In0,53Ga0,47As on Fe-InP(001) for avalanche photodiodes (APDs). North American Molecular Beam Epitaxy (NAMBE 2018), Sep 2018, Banff, Canada. ⟨hal-02073092⟩
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