Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2018

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

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hal-02071864 , version 1 (18-03-2019)

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S. Reboh, R. Coquand, S. Barraud, N. Loubet, N. Bernier, et al.. Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology. Applied Physics Letters, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩. ⟨hal-02071864⟩
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