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Article Dans Une Revue Journal of Crystal Growth Année : 2011

Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide

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hal-02070640 , version 1 (18-03-2019)

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Moïra Hocevar, Gilles Patriarche, Abdelkader Souifi, Michel Gendry. Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide. Journal of Crystal Growth, 2011, 321 (1), pp.1-7. ⟨10.1016/j.jcrysgro.2011.01.067⟩. ⟨hal-02070640⟩
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