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Article Dans Une Revue JINST Année : 2019

Boron-10 conversion layer for ultra-cold neutron detection

Résumé

We report on the development of a 10B conversion layer optimized for ultra-cold neutron detection with silicon detectors. The efficiency of this layer is high and roughly uniform over a large ultra-cold neutron velocity range. The designed titanium-boron-nickel multilayer film was deposited on silicon using a microwave plasma-assisted co-sputtering method (first, for test purpose, on silicon wafers, then directly on the surface of a CCD sensor). The obtained sensor was then tested using both cold and ultra-cold neutrons.

Dates et versions

hal-02066911 , version 1 (13-03-2019)

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Citer

Benoit Clement, Alexandre Bes, Ana Lacoste, Rodolphe Combe, Valery V. Nesvizhevsky, et al.. Boron-10 conversion layer for ultra-cold neutron detection. JINST, 2019, 14 (09), pp.P09003. ⟨10.1088/1748-0221/14/09/P09003⟩. ⟨hal-02066911⟩
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