Communication Dans Un Congrès Année : 2009

Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements

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hal-02066839 , version 1 (13-03-2019)

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J. Gyani, S. Soliverès, Frédéric Martinez, M. Valenza, C. Le Royer, et al.. Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements. 2009 10th International Conference on Ultimate Integration on Silicon (ULIS, Mar 2009, Aachen, Germany. pp.87-90, ⟨10.1109/ULIS.2009.4897545⟩. ⟨hal-02066839⟩
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