(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014
Fichier non déposé

Dates et versions

hal-02065948 , version 1 (13-03-2019)

Identifiants

  • HAL Id : hal-02065948 , version 1

Citer

Marco Pala, David Esseni. (Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs. 225th ECS : Dielectrics for Nanosystems 6: Materials Science, Processing, Reliabilty and Manufacturing, D. Misra, Y. Obeng, T. Chikyow, H. Iwai, Z. Chen and D. Bauza, May 2014, Orlando, United States. ⟨hal-02065948⟩
17 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More