Article Dans Une Revue Microelectronic Engineering Année : 2011

A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

Domaines

Dates et versions

hal-02064898 , version 1 (12-03-2019)

Identifiants

Citer

M. Valenza, J. El Husseini, J. Gyani, Frédéric Martinez, M. Bawedin, et al.. A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology. Microelectronic Engineering, 2011, 88 (7), pp.1298-1300. ⟨10.1016/j.mee.2011.03.090⟩. ⟨hal-02064898⟩
56 Consultations
0 Téléchargements

Altmetric

Partager

  • More