High-Voltage SiC-JFET Fabrication and Full Characterization
Résumé
3.3 kV Power JFETs have been designed, fabricated and measured in the framework of the FilSiC project. The paper presents the main characterization results with classical static and dynamic measurements as well as double pulse tests for switching characterization. The study is completed by a data-sheet evaluation for the measured components and an evaluation of the associated safe operating area.
| Origine | Fichiers produits par l'(les) auteur(s) |
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