On-Wafer Broadband Microwave Measurement of High impedance Devices-CPW Test Structures with Integrated Metallic Nano-resistances - Archive ouverte HAL
Communication Dans Un Congrès Année : 2018

On-Wafer Broadband Microwave Measurement of High impedance Devices-CPW Test Structures with Integrated Metallic Nano-resistances

Résumé

On-wafer microwave characterization and uncertainty evaluation of two-port coplanar waveguide (CPW) high impedance nanodevices devices are proposed. The test vehicles are built up with resistive metallic nano-films integrated in tapered CPW structures. Microwave conductance in the range 100-500µS associated to parallel capacitances in the order of hundreds aF are exemplary shown up to 20GHz. In addition, the uncertainty related to the post-calibration residual errors terms together with a sensitivity study to the technological process variability using FEM-based EM modelling are considered.
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Dates et versions

hal-02056825 , version 1 (04-03-2019)

Identifiants

Citer

K. Daffe, F. Mubarak, V. Mascolo, H. Votsi, N. Ridler, et al.. On-Wafer Broadband Microwave Measurement of High impedance Devices-CPW Test Structures with Integrated Metallic Nano-resistances. 2018 48th European Microwave Conference (EuMC), Sep 2018, Madrid, Spain. pp.25-28, ⟨10.23919/EuMC.2018.8541607⟩. ⟨hal-02056825⟩
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