Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate
Résumé
Dynamic Ron measurements and substrate ramping characterization have been performed on GaN-based Schottky diodes and TLM test structures with different back barrier configurations. Parameters such as channel length, ramp rate and temperature have been tested to improve the understanding of back barrier screening effect on the device dynamic behavior.