Communication Dans Un Congrès Année : 2018

Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate

Résumé

Dynamic Ron measurements and substrate ramping characterization have been performed on GaN-based Schottky diodes and TLM test structures with different back barrier configurations. Parameters such as channel length, ramp rate and temperature have been tested to improve the understanding of back barrier screening effect on the device dynamic behavior.

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Dates et versions

hal-02050406 , version 1 (27-02-2019)

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  • HAL Id : hal-02050406 , version 1

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Thomas Lorin, W. Vandendaele, Romain Gwoziecki, C. Gillot, J. Biscarrat, et al.. Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate. 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia. ⟨hal-02050406⟩
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