Communication Dans Un Congrès Année : 2017

Self-heating assessment and cold current extraction in FDSOI MOSFETs

Résumé

We present an experimental study of thermal effects in thin film FDSOI MOSFETs, with a focus on the impact of self-heating effect (SHE) on drain current. We have performed thermal resistance extraction using the gate thermometry method, and calculated the resulting cold drain current (Id0), i.e. without SHE. We demonstrate that SHE is more pronounced in shorter and narrower devices without essential differences between nMOS and pMOS transistors. Our experiments show that although the temperature increases significantly in the channel due to SHE, its effect on the ION performances could be limited at operating voltage.

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Dates et versions

hal-02050233 , version 1 (27-02-2019)

Identifiants

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K. Triantopoulos, M. Cassé, L. Brunet, P. Batude, C. Fenouillet-Beranger, et al.. Self-heating assessment and cold current extraction in FDSOI MOSFETs. 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.6.4, ⟨10.1109/S3S.2017.8309239⟩. ⟨hal-02050233⟩
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