Communication Dans Un Congrès Année : 2017

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

Résumé

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques established for Si MOSFETs are applied in order to extract the electrical parameters and study the behavior of these research grade devices.

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Dates et versions

hal-02050212 , version 1 (27-02-2019)

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Citer

T.A. Karatsori, M. Pastorek, Christoforos Theodorou, A. Fadjie, Nicolas Wichmann, et al.. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.105-108, ⟨10.1109/ULIS.2017.7962613⟩. ⟨hal-02050212⟩
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