Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers - Archive ouverte HAL Access content directly
Conference Papers Year : 2015
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hal-02025329 , version 1 (19-02-2019)

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  • HAL Id : hal-02025329 , version 1

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Roxana Arvinte, Marcin Zielinski, Thierry Chassagne, Marc Portail, Adrien Michon, et al.. Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers. 10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.149-152. ⟨hal-02025329⟩
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